NP60N04KUG
280
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
1000
FORWARD TRANSFER CHARACTERISTICS
V DS = 10 V
240
100
Pulsed
200
160
120
80
40
0
V GS = 10 V
10
1
0.1
0.01
0.001
T A = ? 55°C
25°C
125°C
175°C
0
0.4
0.8
1.2
1.6
2
0
1
2
3
4
5
6
V DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4.0
100
V GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V GS = V DS
I D = 250 μ A
10
T A = ? 55°C
25°C
125°C
175°C
V DS = 10 V
Pulsed
0
-100
-50
0
50
100
150
200
1
0.1
1
10
100
1000
T ch - Channel Temperature - ° C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
I D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
9
8
7
Pulsed
9
8
7
I D = 48 A
30 A
12 A
Pulsed
6
5
6
5
4
3
2
1
0
V GS = 10 V
4
3
2
1
0
1
10
100
1000
0
2
4
6
8
10 12 14 16 18 20
4
I D - Drain Current - A
Data Sheet D16861EJ3V0DS
V GS - Gate to Source Voltage - V
相关PDF资料
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相关代理商/技术参数
NP60N04MUG-S18-AY 功能描述:MOSFET N-CH 40V 60A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP60N04MUK 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP60N04MUK-S18-AY 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 40V 60A TO-220
NP60N04NUK-S18-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP60N04VUK 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP60N04VUK-E1-AY 制造商:Renesas Electronics Corporation 功能描述:POWER DEVICE E AUTOMOTIVE MOS MP-3ZP - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 40V 60A TO-252
NP60N04VUK-E2-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP60N055KUG-E1-AY 功能描述:MOSFET N-CH 55V 60A TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件